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| SMD Type Silicon PNP Epitaxial Planar Type 2SA1532 Transistors Features High transition frequency fT. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -30 -20 -5 -30 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Base-emitter saturation voltage Collector-base cutoff current Collector-emitter cutoff current Emitter-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Noise voltage Reverse transfer impedance Common-emitter reverse transfer capacitance Symbol VBE ICBO ICEO IEBO hFE Testconditons VCE = -10 iA, IC = -1 mA VCB = -10 V, IE = 0 VCE = -20 V, IB = 0 VEB = -5 V, IC = 0 VCB = -10 V, IE = 1 mA 50 -0.1 150 300 2.8 22 1.2 4.0 60 2.0 Min Typ -0.7 -0.1 -100 -10 220 V MHz dB U pF Max Unit V iA iA iA VCE(sat) IC = -10 mA, IB = -1 mA fT NF Zrb Cre VCB = -10 V, IE = 1 mA, f = 200 MHz VCB = -10 V, IE = 1 mA, f = 5 MHz VCB = -10 V, IE = 1 mA, f = 2 MHz VCB = -10 V, IE = 1 mA, f = 10.7 MHz hFE Classification Marking Rank hFE A 50 100 E B 70 140 C 110 220 www.kexin.com.cn 1 |
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